Abstract:
FINFET transistors' leakage current resources at nanoscale
technology will be investigated, analyzed and discussed in
this paper; such as, Subthreshold leakage current, tunneling
leakage current, and source-drain leakage current. The main
SPICE parameters which influence the leakage current will
be also discussed. Different techniques and models were used
to reduce the leakage current will be compared, an efficient
technique used for sub-nano transistors are also invstigated to
reduce leakage current at minimum value, FINFET DoubleGate
Transistor is shown that it is the promising technique to
operate at 5nm gate channel. Results based on BSIMCMG107,
and NEMO5 simulation tools at Birck Center at
Purdue University are tested and used. Comparing between
these techniques, FINFET transistors seems to be the most
efficient low power technique comparing with other efficient
one.